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MIC94001 Micrel MIC94001 P-Channel MOSFET Not Recommended for New Designs General Description The MIC94001 is a silicon gate P-channel MOSFET designed for low on-resistance, high-side switch applications. The MIC94001 has a maximum on-resistance of 0.4 at 4.5V gate-to-source voltage. Improved ESD protection is provided by the gate protection network shown in the schematic diagram. The MIC94001 is supplied in a low-profile version of the 8-lead SOIC package. The MIC94001 die can be assembled in a 4-terminal configuration with the body not shorted to the source for use in analog switch applications. Contact the factory for more information. Features * 15V minimum drain-to-source breakdown * 0.4 maximum on-resistance at 4.5V gate-to-source * Functional at 2.7V gate-to-source * 0.063" maximum height Applications * * * * High-side switch Power management Stepper motor control 1.8" PCMCIA disk-drive VCC switch Ordering Information Part Number MIC94001BLM Temperature Range* -55C to +150C Package 8-lead SOIC * Operating Junction Temperature Low Profile Leads, see Package Information Schematic Information Source Gate Pin Configuration 1 NC Drain 8 Drain 2 3 4 Source Drain 7 Source Drain 6 Gate Drain 5 6 Schematic Symbol S G D 8-lead Low-Profile SOIC Package (LM) Schematic Diagram Typical Application Package Information 0.026 (0.65) MAX) Pin 1 +5V On Off MIC94001 0.154 (3.90) 74HC04 0.050 (1.27) 0.016 (0.40) TYP TYP Load 0.193 (4.90) 45 3-6 Power Switch Application 0.063 (1.60) MAX 0.057 (1.45) 0.049 (1.25) 0.197 (5.0) 0.189 (4.8) SEATING PLANE 0.244 (6.20) 0.228 (5.80) Patent 5,355,008 August 1998 6-37 MIC94001 Micrel Absolute Maximum Ratings Voltage and current values are negative. Signs not shown for clarity. Drain-to-Source Voltage ................................................ 15V Gate-to-Source Voltage ................................................ 15V Continuous Drain Current TA = 25C ................................................................. 1.6A TA = 100C .................................................................. 1A Operating Juction Temperature ................. -55C to +150 Storage Temperature ............................... -55C to +150C Total Power Dissipation TA = 25C ................................................................... 1W TA = 100C .............................................................. 0.4W Thermal Resistance JA ...................................................................................... 125C/W JC ........................................................................................ 76C/W Lead Temperature 1/16" from case, 10s ........................................... +300C Electrical Characteristics TA = 25C unless noted. Symbol VBDSS VGS IGSS IDSS ID(ON) RDS(ON) gFS Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Condition All values are negative. Signs not shown for clarity. Min 15 1 3 100 25 250 5.5 0.35 0.7 0.40 Typ Max Units V V nA A A A S VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 15V, Note 2 VDS = 15V, VGS = 0V VDS = 15V, VGS = 0V, TJ = 125C VDS 10V, VGS = 10V, Note 1 VGS = 4.5V, ID = 50mA VDS = 15V, ID = 1A, Note 1 On-State Drain Current Drain-Source On-State Resist. Forward Transconductance Note 1: Pulse Test: Pulse Width 300sec, Duty Cycle 2% Note 2: ESD gate protection diode conducts during positive gate-to-source voltage excursions. On Resistance vs. Drain Current 0.45 0.40 0.35 RDS(ON) () 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.4 0.8 1.2 1.6 ID (A) Note 1 2.0 VGS = 10V VGS = 4.5V 2000 1800 1600 1400 ID (mA) 1200 1000 800 600 400 200 0 0.0 Drain Characteristics VGS = 4.0 VGS = 3.5 VGS = 3.0 VGS = 2.5 VGS = 2.0 VGS = 1.5 2.5 5.0 7.5 10.0 12.5 15.0 VDS (V) Note 1 6-38 August 1998 |
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